 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features * 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V RDS(ON) = 0.032 @ VGS = 6 V. * Critical DC electrical parameters specified at evevated temperature. * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. * High performance trench technology for extremely low RDS(ON). * 175C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP5690 60 20 FDB5690 Units V V A W W/C C - Continuous - Pulsed 32 100 58 0.4 -65 to +175 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB5690 FDP5690 2000 Fairchild Semiconductor International Device FDB5690 FDP5690 Reel Size 13'' Tube Tape Width 24mm N/A Quantity 800 45 FDP5690/FDB5690 Rev. C FDP5690/FDB5690 Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings WDSS IAR Tc = 25C unless otherwise noted Test Conditions (Note1) Min Typ Max 80 32 Units mJ A Single Pulse Drain-Source VDD = 30 V, ID = 32A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS BVDSS T J IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 1) VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 60 61 1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 16 A, VGS = 10 V, ID = 16 A,TJ = 125C VGS = 6 V, ID = 15 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16 A 2 2.4 -6.4 0.021 0.042 0.024 4 V mV/C 0.027 0.055 0.032 ID(on) gFS 50 32 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 1) VDS = 25 V, VGS = 0 V, f = 1.0 MHz 1120 160 80 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 10 9 24 10 18 18 39 18 33 ns ns ns ns nC nC nC VDS = 15 V, ID = 16 A, VGS = 10 V 23 3.9 6.8 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 16 A Voltage (Note 1) (Note 1) 0.92 32 1.2 A V Note: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDP5690/FDB5690 Rev. C FDP5690/FDB5690 Typical Characteristics 80 70 60 5.0V 50 40 30 20 10 0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) 4.0V 4.5V 7.0V 6.0V VGS = 10V ID, DRAIN-SOURCE CURRENT (A) 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 4.5V 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80 5.0V 6.0V 7.0V 10V VGS = 4.0V Figure 1. On-Region Characteristics. 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON) , ON-RESISTANCE (OHM) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 ID = 16A 0.05 TA = 125 C o ID = 16A VGS = 10V 0.04 0.03 0.02 TA = 25 C o 0.01 125 150 175 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 25 C 125 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 C 25 C -55 C o o o TA = -55 C o o Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP5690/FDB5690 Rev. C FDP5690/FDB5690 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16A (continued) 1600 VDS = 10V 8 30V 20V CAPACITANCE (pF) 1200 CISS f = 1MHz VGS = 0 V 6 800 4 400 COSS CRSS 0 2 0 0 5 10 15 20 25 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 1000 Figure 8. Capacitance Characteristics. 2500 SINGLE PULSE o RJC = 2.6 C/W TA = 25 C o ID DRAIN CURRENT (A) 100 1ms RDS(ON) LIMIT 1s 10s DC VGS = 10V SINGLE PULSE RJC = 2.3 C/W TC = 25 C o o 2000 10ms POWER (W) 100 100ms 10 1500 1000 1 500 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (ms) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.3 0.2 0.1 0.2 D = 0.5 R JC (t) = r(t) * RJC R JC = 2.6 C/W P(pk) 0.1 0.05 0.05 0.02 Single Pulse t1 0.03 0.01 0.02 0.01 0.01 t2 TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 0.1 1 t1 ,TIME (ms) 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP5690/FDB5690 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E |
Price & Availability of FDB5690
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |